Vishay Intertechnology, Inc. introduces three new 500-V n-channel power MOSFETs with ultra-low maximum on-resistance and an improved gate charge in TO-220, TO-220 FULLPAK, and D2PAK (TO-263) packages.

Product Benefits:

• Low 0.555-Ω maximum on-resistance at a 10-V gate drive lowers conduction losses and saves energy
• Improved gate charge of 48 nC
• Gate charge times on-resistance is a low 26.64 Ω-nC
• Offered in TO-220, TO-220 FULLPAK, and 2PAK packages
• Produced using Vishay Planar Cell technology
• Compliant to RoHS Directive 2002/95/EC
• 100 % avalanche tested for reliable operation

Market Applications:

• Power factor correction (PFC) boost circuits, pulsewidth modulation (PWM) half bridges, and LLC topologies in notebook computer AC adapters, PC and LCD TVs, and open-frame power supplies

The Key Specifications:

• 500-V drain-source voltage
• 12-A continuous drain current
• 0.555-Ω maximum on-resistance at 10 V
• Gate charge of 48 nC
• Packages:
• TO-220 (SiHP12N50C-E3)
• TO-220 FULLPAK (SiHF12N50C-E3)
• D2PAK (SiHB12N50C-E3)

The Perspective:
The low 0.555-Ω maximum on-resistance of the SiHP12N50C-E3, SiHF12N50C-E3, and SiHB12N50CE3 n-channel power MOSFETs translates into lower conduction losses that save energy in a wide range of applications. In addition to their low on resistance, the devices feature a gate charge of 48 nC. Gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications, is a low 26.64 Ω-nC. The new n-channel MOSFETs are produced using Vishay Planar Cell technology, which has been tailored to minimize on-state resistance and withstand high energy pulses in the avalanche and commutation modes. Compared to previous-generation MOSFETs, the SiHP12N50CE3, SiHF12N50C-E3, and SiHB12N50C-E3 offer improved switching speed and losses.

Availability:
Samples and production quantities of the new power MOSFETs are available now, with lead times of 8 to 10 weeks for larger orders.